Skip to main content

Eingereichte Veröffentlichungen von Prof. Dr. Daniel Hägele

2021

 

Continuous Quantum Measurements via Random-Time Sampling

Markus Sifft and Daniel Hägele, arXiv:2109.05862

Veröffentlichungen von Prof. Dr. Daniel Hägele

2021

 

Quantum polyspectra for modeling and evaluating quantum transport measurements: A unifying approach to the strong and weak measurement regime,

M. Sifft, A. Kurzmann, J. Kerski, R. Schott, A. Ludwig, A. D. Wieck, A. Lorke, M. Geller, D. Hägele, Phys. Rev. Research 3, 033123 (2021).

2019

Optical excitation density dependence of spin dynamics in bulk cubic GaN,

J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, J. Appl. Phys. 126, 153901 (2019)

Electron spin dynamics in mesoscopic GaN nanowires,

J. H. Buß, S. Fernández-Garrido, O. Brandt, D. Hägele, and J. Rudolph, Appl. Phys. Lett. 114, 092406 (2019)

 

2018

Higher-order moments, cumulants, and spectra of continuous quantum noise measurements,

Daniel Hägele and Fabian Schefczik, Phys. Rev. B 98, 205143 (2018)

Millisecond Dynamics of the Magnetocaloric Effect in a First‐ and Second‐Order Phase Transition Material,
J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, and D. Hägele, Energy Technol. 6, 1470 (2018)

Modulation infrared thermometry of caloric effects at up to kHz frequencies,
J. Döntgen, J. Rudolph, A. Waske and D. Hägele, Rev. Sci. Instr. 89, 033909 (2018)

2016

Electron spin dynamics in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, O. Brandt, D. Hägele, J. Rudolph, Phys. Rev. B 94, 235202 (2016)

Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment,
J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, and D. Hägele, Phys. Rev. B 93, 155204 (2016)

2015

Temperature dependence of the electron Landé g-factor in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, D. Hägele and J. Rudolph, J. Appl. Phys. 118, 225701 (2015)

Strain dependent electron spin dynamics in bulk cubic GaN,
A. Schaefer, J. H. Buß, T. Schupp, A. Zado, D. J. As, D. Hägele and J. Rudolph, J. Appl. Phys. 117, 093906 (2015)

Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples,
J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, S. Salomon, A. Ludwig and D. Hägele, Appl. Phys. Lett. 106, 032408 (2015)

2014

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature,
J. H. Buß, A. Schaefer, T. Schupp, D. J. As, D. Hägele and J. Rudolph, Appl. Phys. Lett. 105, 182404 (2014)

Electron Spin Dynamics in GaN,
Jörg Rudoph, Jan Heye Buß and Daniel Hägele, Physica Status Solidi B 251, 1850 (2014)

Discrete-time windows with minimal RMS bandwidth for given RMS temporal width,
Sebastian Starosielec and Daniel Hägele, Signal Processing 102, 240 (2014)

2013

Dyakonov-Perel electron spin relaxation in a highly degenerate wurtzite semiconductor,
J. Rudolph, J.H. Buß, F. Semond, and D. Hägele, AIP Conf. Proceedings 1566, 361 (2013)

Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,
J. H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D. Wieck, and D. Hägele, Appl. Phys. Lett. 103, 092401 (2013)

Long electron spin coherence in ion-implanted GaN: The role of localization,
J. H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, and D. Hägele, Appl. Phys. Lett. 102, 192102 (2013)

Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele , Proc. of SPIE Vol. 86, 2386230B-2 (2013)

2012

Electron spin orientation under in-plane optical excitation in GaAs quantum wells,
S. Pfalz, R. Winkler, N. Ubbelohde, D. Hägele, and M. Oestreich, Phys. Rev. B 86, 165301 (2012)

2011

Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele, Phys. Rev. B 84, 153202 (2011)

Long room-temperature electron spin lifetimes in bulk cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele,
Proc. SPIE 7937, 793711 (2011)

2010

Two-dimensional higher order noise spectroscopy up to radio frequencies,
S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele, Rev. Sci. Instr. 81, 125101 (2010)

Long room-temperature electron spin lifetimes in highly doped cubic GaN,
J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele, Appl. Phys. Lett. 97, 062101 (2010)

Temperature dependence of electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele, Phys. Rev. B 81, 155216 (2010)

2009

Anisotropic electron spin relaxation in bulk GaN,
J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele, Appl. Phys. Lett. 95, 192107 (2009)

Towards Bose-Einstein condensation of semiconductor excitons: The biexciton polarization effect,
D. Hägele, S. Pfalz and M. Oestreich, Phys. Rev. Lett. 103, 146402 (2009)

Temperature-dependent electron Landé g factor and the interband matrix element of GaAs,
J. Hübner, S. Döhrmann, D. Hägele and M. Oestreich, Phys. Rev. B 79, 193307 (2009)

Transient terahertz spectroscopy of excitons and unbound carriers in quasi-two-dimensional electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan and D. S. Chemla, Phys. Rev. B 79, 045320 (2009), arXiv.org

2008

Ultrafast Spin Noise Spectroscopy,
S. Starosielec and D. Hägele, Appl. Phys. Lett. 93, 051116 (2008)

Ultrafast THz spectroscopy of excitons in multi-component carrier gases,
R. A. Kaindl, M. A. Carnahan, D. Hägele and D. S. Chemla, Advances in Solid State Physics 47, 191 (2008)

2007

2006

Comment on "Electrically injected spin-polarized vertical-cavity surface-emitting lasers [Appl. Phys. Lett. 87, 091108 (2005)]",
D. Hägele and M. Oestreich, Appl. Phys. Lett. 88, 056101 (2006)

Ultrafast THz spectroscopy of correlated electrons: from excitons to Cooper pairs,
R. A. Kaindl, R. Huber, B. A. Schmidt, M. A. Carnahan, D. Hägele, and D. S. Chemla, Phys. Stat. Solidi (b) 243, 2414 (2006)

2005

Room temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,
J. Rudolph, S. Döhrmann, D. Hägele, W. Stolz, and M. Oestreich, Appl. Phys. Lett. 87, 241117 (2005)

Electron Spin Relaxation in Semiconductors,
D. Hägele, S. Döhrmann, J. Rudolph and M. Oestreich, Advances in Solid State Physics 45, 253 (2005)

Spin noise spectroscopy in GaAs,
M. Oestreich, M. Römer, R. J. Haug, and D. Hägele, Phys. Rev. Lett. 95, 216603 (2005)

Optical orientation of electron spins in GaAs quantum wells,
S. Pfalz, R. Winkler, T. Nowitzki, D. Reuter, A. D. Wieck, D. Hägele, and M. Oestreich, Phys. Rev. B 71, 165305 (2005)

Signatures of stimulated bosonic exciton-scattering in semiconductor luminescence,
D. Hägele, S. Pfalz, and M. Oestreich, Solid State Comm. 134, 171 (2005)

Design considerations for semiconductor spin lasers,
M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele, Superlattices and Microstructures 37, 306 (2005) (invited)

2004

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,
S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich, Phys. Rev. Lett. 93, 147405 (2004)

Terahertz probes of transient conducting and insulating phases in quasi-2D electron-hole gases,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla, Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004 503 (2004)

2003

Circular photogalvanic effect at inter­band excitation in semiconductor quantum wells,
V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl, Solid State Comm. 123, 283 (2003)

Laser threshold reduction in a spintronic device,
J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich, Appl. Phys. Lett. 82, 4516 (2003)

Ultrafast terahertz probes of transient conducting and insulating phases in an electron­-hole gas,
R. A. Kaindl, M. A. Carnahan, D. Hägele, R. Lövenich, and D. S. Chemla, Nature 423, 734 (2003)

Exciton dynamics studied via internal THz transitions,
R. A. Kaindl, D. Hägele, M. A. Carnahan, R. Lövenich, and D. S. Chemla, Phys. Stat. Solidi (b) 238, 451 (2003) (invited)

2002

Semiconductor polarization dynamics from the coherent to the incoherent regime: Theory and experiment,
R. Lövenich, C. W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer, Phys. Rev. B 66, 045306 (2002)

From coherently excited correlated states to incoherent relaxation processes in semiconductors,
R. Lövenich, C.W. Lai, D. Hägele, D. S. Chemla, and W. Schäfer, Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. 270 (2002)

2001

Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich, Solid State Comm. 120, 73 (2001)

Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
M. Oestreich, J. Hübner, D. Hägele, M. Bender, H. Kalt, P. Klar, W. Heimbrodt, W.W. Rühle, W. Stolz, and K. Eberl, Festkörperprobleme/Advances in Solid State Physics 41, 173 (2001) (invited)

2000

Excitons or no excitons, that is the question,
M. Oestreich, D. Hägele, J. Hübner, W. W. Rühle, Phys. Stat. Sol. (a) 178, 27 (2000)

1999

Cooling dynamics of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki, Phys. Rev. B Rapid Comm. 59, 7797 (1999)

Spin injection into semiconductors,
M. Oestreich, J. Hübner, D. Hägele, P. J. Klar, W. Heimbrodt, W. W. Rühle, D. E. Ashenford, and B. Lunn, Appl. Phys. Lett. 74, 1251 (1999)

Energy loss rate of excitons in GaN,
D. Hägele, R. Zimmermann, M. Oestreich, M. R. Hofmann, W. W. Rühle, B. K. Meyer, H. Amano, and I. Akasaki, Physica B 272, 409 (1999)

Relation between spin and momentum relaxation in ZnSe/ZnMgSSe quantum wells,
D. Hägele, M. Oestreich, W. W. Rühle, J. Hoffmann, S. Wachter, H. Kalt, K. Ohkawa, and D. Hommel, Physica B 272, 338 (1999)

When do excitons really exist?,
D. Hägele, J. Hüber, Rühle, and M. Oestreich, Physica B 272, 328 (1999)

M. R. Hofmann, R. Zimmermann, D. Hägele, M. Oestreich, and W. W. Rühle,
Ultrafast physics in nitrides, Mater. Sci. Eng. B 59, 141 (1999) (invited)

1998

Spin transport in GaAs,
D. Hägele, M. Oestreich, W. W. Rühle, N. Nestle, and K. Eberl, Appl. Phys. Lett. 73, 1580 (1998)

Direct observation of the rotational direction of electron spin precession in semiconductors,
M. Oestreich, D. Hägele, H.­C. Schneider, A. Knorr, A. Hansch, S. Hallstein, K. H. Schmidt, K. Köhler, S. W. Koch, and W. W. Rühle, Solid State Comm. 180, 753 (1998)

Invited talks (first author)

Semiconductor spinelectronics,
D. Hägele, CSIN-8/ICTF-13, Stockholm, June 2005

Electron spin relaxation in semiconductors,
Daniel Hägele, Stefanie Döhrmann, Jörg Rudolph, and Michael Oestreich,
Festkörperprobleme/Advances in Solid State Physics 45, 253 (2005) Hauptvortrag, Jahrestagung der Deutschen Physikalischen Gesellschaft in Berlin, März 2005

Coherent dynamics of coupled electron and hole spins in semiconductors,
D. Hägele, J. Hübner, W. W. Rühle, and M. Oestreich,
Technical Digest, Summaries of papers presented at the Quantum Electronics and Laser Science Conference (QELS-2001), Opt. Soc. America 160 (2001)

Spintronics with semiconductors,
Daniel Hägele, Jörg Rudolph, Stefanie Döhrmann, and Michael Oestreich,
Invited Lecture at the 2004 International Conference on MEMs, NANO and Smart Systems (ICMENS 2004) in Banff, Alberta, Canada, August 2004

Andere Veröffentlichungen

Magnetoelectronics enhance memory,
D. Hägele and M. Oestreich, Physics World 20 (2003)

Spintronics: Spin Electronics and Optoelectronics in Semiconductors,
Michael Oestreich, Jens Hübner, and Daniel Hägele, in Lecture Notes in Physics 579, 181 Springer 2001 (edited by R. Haug and H. Schoeller)

Veröffentlichungen von Dr. Jörg Rudolph

2019

Optical excitation density dependence of spin dynamics in bulk cubic GaN,

J. H. Buß, T. Schupp, D. J. As, D. Hägele, and J. Rudolph, J. Appl. Phys. 126, 153901 (2019)

Electron spin dynamics in mesoscopic GaN nanowires,

J. H. Buß, S. Fernández-Garrido, O. Brandt, D. Hägele, and J. Rudolph, Appl. Phys. Lett. 114, 092406 (2019)

2018

Millisecond Dynamics of the Magnetocaloric Effect in a First‐ and Second‐Order Phase Transition Material,

J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, and D. Hägele, Energy Technol. 6, 1470 (2018)

Modulation infrared thermometry of caloric effects at up to kHz frequencies,
J. Döntgen, J. Rudolph, A. Waske and D. Hägele, Rev. Sci. Instr. 89, 033909 (2018)

2016

Electron spin dynamics in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, O. Brandt, D. Hägele, J. Rudolph, Phys. Rev. B 94, 235202 (2016)

Optical manipulation of a multilevel nuclear spin in ZnO: Master equation and experiment,
J. H. Buß, J. Rudolph, T. A. Wassner, M. Eickhoff, and D. Hägele, Phys. Rev. B 93, 155204 (2016)

2015

Temperature dependence of the electron Landé g-factor in cubic GaN,
J. H. Buß, T. Schupp, D. J. As, D. Hägele and J. Rudolph, J. Appl. Phys. 118, 225701 (2015)

Strain dependent electron spin dynamics in bulk cubic GaN,
A. Schaefer, J. H. Buß, T. Schupp, A. Zado, D. J. As, D. Hägele and J. Rudolph, J. Appl. Phys. 117, 093906 (2015)

Temperature dependent low-field measurements of the magnetocaloric ΔT with sub-mK resolution in small volume and thin film samples,
J. Döntgen, J. Rudolph, T. Gottschall, O. Gutfleisch, S. Salomon, A. Ludwig and D. Hägele, Appl. Phys. Lett. 106, 032408 (2015)

2014

High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature,
J. H. Buß, A. Schaefer, T. Schupp, D. J. As, D. Hägele and J. Rudolph, Appl. Phys. Lett. 105, 182404 (2014)

Electron Spin Dynamics in GaN,
Jörg Rudoph, Jan Heye Buß and Daniel Hägele, Physica Status Solidi B 251, 1850 (2014)

2013

Dyakonov-Perel electron spin relaxation in a highly degenerate wurtzite semiconductor,
J. Rudolph, J.H. Buß, F. Semond, and D. Hägele, AIP Conf. Proceedings 1566, 361 (2013)

Magneto-optical studies of Gd-implanted GaN: No spin alignment of conduction band electrons,
J. H. Buß, J. Rudolph, S. Shvarkov, F. Semond, D. Reuter, A. D. Wieck, and D. Hägele, Appl. Phys. Lett. 103, 092401 (2013)

Long electron spin coherence in ion-implanted GaN: The role of localization,
J. H. Buß, J. Rudolph, S. Shvarkov, H. Hardtdegen, A. D. Wieck, and D. Hägele, Appl. Phys. Lett. 102, 192102 (2013)

Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation,
J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, and D. Hägele , Proc. of SPIE Vol. 86, 2386230B-2 (2013)

2011

Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: from the non-degenerate to the highly degenerate regime,

J. H. Buß, J. Rudolph, S. Starosielec, A. Schaefer, F. Semond, Y. Cordier, A. D. Wieck, and D. Hägele, Phys. Rev. B 84, 153202 (2011)

Long room-temperature electron spin lifetimes in bulk cubic GaN,

J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele, Proc. SPIE 7937, 793711 (2011)

2010

Two-dimensional higher order noise spectroscopy up to radio frequencies,

S. Starosielec, R. Fainblat, J. Rudolph, and D. Hägele, Rev. Sci. Instr. 81, 125101 (2010)

Long room-temperature electron spin lifetimes in highly doped cubic GaN,

J. H. Buß, J. Rudolph, T. Schupp, D. J. As, K. Lischka, and D. Hägele, Appl. Phys. Lett. 97, 062101 (2010)

Temperature dependence of electron spin relaxation in bulk GaN,

J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele, Phys. Rev. B 81, 155216 (2010)

2009

Anisotropic electron spin relaxation in bulk GaN,

J. H. Buß, J. Rudolph, F. Natali, F. Semond and D. Hägele, Appl. Phys. Lett. 95, 192107 (2009)

2008

ZnO/SiO2 microcavity modulator on silicon,
P. D. Batista, B. Drescher, W. Seidel, J. Rudolph, S. Jiao, and P. V. Santos, Appl. Phys. Lett. 92, 133502 (2008)

Spin-orbit dependence on carrier momentum in (1 1 0) GaAs quantum wells,
O.D.D. Couto Jr., J. Rudolph, F. Iikawa, R. Hey, P.V. Santos, Physica E 40, 1797 (2008)

2007

Long-Range Exciton Transport by Dynamic Strain Fields in a GaAs Quantum Well,
J. Rudolph, R. Hey, and P. V. Santos, Phys. Rev. Lett. 99, 047602 (2007)

Anisotropic Spin Transport in (110) GaAs Quantum Wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, and P.V. Santos, Phys. Rev. Lett. 98, 036603 (2007)

Exciton transport by surface acoustic waves,
J. Rudolph, R. Hey, and P. V. Santos, Superlattices and Microstructures 41, 293 (2007)

Long-range spin transport in (110) GaAs quantum wells,
O.D.D Couto, Jr., F. Iikawa, J. Rudolph, R. Hey, P.V. Santos, and K. H. Ploog, AIP Conf. Proceedings 893, 1273 (2007)

2005

Room temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons,

J. Rudolph, S. Döhrmann, D. Hägele, W. Stolz, and M. Oestreich, Appl. Phys. Lett. 87, 241117 (2005)

Electron Spin Relaxation in Semiconductors,

D. Hägele, S. Döhrmann, J. Rudolph and M. Oestreich, Advances in Solid State Physics 45, 253 (2005)

Design considerations for semiconductor spin lasers,

M. Oestreich, J. Rudolph, R. Winkler, and D. Hägele, Superlattices and Microstructures 37, 306 (2005) (invited)

2004

Anomalous Spin Dephasing in (110) GaAs Quantum Wells: Anisotropy and Intersubband Effects,

S. Döhrmann, D. Hägele, J. Rudolph, D. Schuh, M. Bichler, and M. Oestreich, Phys. Rev. Lett. 93, 147405 (2004)

2003

Circular photogalvanic effect at inter­band excitation in semiconductor quantum wells,

V. V. Belkov, S. D. Ganichev, P. Schneider, C. Back, M. Oestreich, J. Rudolph, D. Hägele, L. E. Golub, W. Wegscheider, and W. Prettl, Solid State Comm. 123, 283 (2003)

Laser threshold reduction in a spintronic device,

J. Rudolph, D. Hägele, H. M. Gibbs, G. Khitrova, and M. Oestreich, Appl. Phys. Lett. 82, 4516 (2003)